1N5417, 1N5418
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 3 A
I
F
= 9 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
-
TYP.
-
-
-
-
75
MAX.
1.1
1.5
1
20
100
UNIT
V
V
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
40
3.5
I
FAV
- Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
R
thJA
= 25 K/W
I = 10 mm
30
20
l
l
10
T
L
= constant
0
0
949466
5
10
15
20
25
30
16388
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000
V
R
= V
RRM
I
F
- Forward Current (A)
10
T
j
= 175 °C
T
j
= 25 °C
I
R
- Reverse Current (μA)
100
1
0.1
10
0.01
0.001
0
16387
0.5
1.0
1.5
2.0
2.5
16389
1
25
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86097
Rev. 1.4, 30-Jul-10
VISHAY [ VISHAY TELEFUNKEN ]
