BAV100...BAV103
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Applications
General purposes
94 9371
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
Test Conditions
Type
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
Symbol
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
I
FSM
I
FRM
I
F
P
V
T
j
T
stg
Value
60
120
200
250
50
100
150
200
1
625
250
500
175
–65...+175
Unit
V
V
V
V
V
V
V
V
A
mA
mA
mW
°
C
°
C
Reverse voltage
g
Peak forward surge current
Repetitive peak forward current
Forward current
Power dissipation
Junction temperature
Storage temperature range
t
p
=1s
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJL
R
thJA
Value
350
500
Unit
K/W
K/W
Document Number 85542
Rev. 2, 01-Apr-99
www.vishay.de
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