BAL99, BAV99
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Leakage Current
at V
R
= 70 V
at V
R
= 70 V, T
j
= 150 °C
at V
R
= 25 V, T
j
= 150 °C
Capacitance
at V
F
= V
R
= 0; f = 1 MHz
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA
measured at I
R
= 1 mA, R
L
= 100
Ω
Thermal Resistance
Junction to Ambient Air
1)
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
Max.
0.715
0.855
1.0
1.25
2.5
100
30
1.5
6
Unit
V
V
V
V
µA
µA
µA
pF
ns
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
tot
t
rr
R
thJA
–
–
430
1)
K/W
Device on fiberglass substrate, see layout.
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.47 (12)
.03 (0.8)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
VISHAY [ VISHAY TELEFUNKEN ]
