BPW34
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Temp. Coefficient of I
k
Reverse Light Current
g
Test Conditions
I
R
= 100
m
A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
Symbol
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
I
k
TK
Ik
I
ra
I
ra
Min
60
Typ
2
70
25
350
–2.6
70
47
0.1
75
50
±65
900
600...1050
4x10
–14
100
100
Max
30
40
Unit
V
nA
pF
pF
mV
mV/K
m
A
m
A
%/K
m
A
m
A
deg
nm
nm
W/√ Hz
ns
ns
40
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
V
R
= 10 V,
l
= 950 nm
Rise Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
Fall Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
l
p
l
0.5
NEP
t
r
t
f
ϕ
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
I
ra rel
– Relative Reverse Light Current
1000
I
ro
– Reverse Dark Current ( nA )
1.4
1.2
100
l
=950nm
V
R
=5V
1.0
10
0.8
V
R
=10V
1
20
40
60
80
100
0.6
0
94 8416
20
40
60
80
100
94 8403
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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2 (5)
Document Number 81521
Rev. 2, 20-May-99
VISHAY [ VISHAY TELEFUNKEN ]
