BS170
DMOS Transistors (N-Channel)
TO-92
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
FEATURES
♦
♦
♦
♦
♦
♦
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
max.
∅
.022 (0.55)
.098 (2.5)
D
G
S
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
On special request, this transistor is also manufactured
in the pin configuration TO-18.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
60
60
± 20
300
0.83
1)
150
–65 to +150
Unit
V
V
V
mA
W
°C
°C
V
DSS
V
DGS
V
GS
I
D
P
tot
T
j
T
s
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode
Symbol
Max. Forward Current (continuous)
at T
amb
= 25 °C
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.5 A, T
j
= 25 °C
I
F
V
F
Value
0.5
0.85
Unit
A
V
4/98
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