BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon Planar Zener Diodes
Low profile surface-mount package
e3
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
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17249
Mechanical Data
Case:
JEDEC DO-219AB (SMF
®
) Plastic case
Weight:
approx. 15 mg
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
T
L
= 80 °C
T
A
= 25 °C
Non-repetitive peak pulse power 100
µs
square pulse
2)
dissipation
10/1000
µs
waveform (BZD27-
C7V5P to BZD27-C100P)
C110P to BZD27-C200P)
1)
2)
2)
Symbol
P
tot
P
tot
P
ZSM
P
RSM
P
RSM
Value
2.3
0.8
1)
300
150
100
Unit
W
W
W
W
W
10/1000
µs
waveform (BZD27-
2)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40
µm
thick)
T
J
= 25 °C prior to surge
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
1)
Test condition
air
1)
Symbol
R
thJA
R
thJL
T
j
T
S
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40
µm
thick)
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85810
Rev. 1.8, 13-Apr-05
Test condition
I
F
= 0.2 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
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