DG211B/212B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Single Power Supply Voltages
250
r DS(on) Drain-Source On-Resistance (
W
)
–
225
200
20
I S,I D – Current (pA)
175
150
125
10 V
100
75
50
25
0
0
2
4
6
8
10
12
14
16
V
D
– Drain Voltage (V)
–30
–40
–20
12 V
15 V
7V
10
0
–10
–20
I
S(off)
, I
D(off)
V+ = 5 V
40
30
V+ = 22 V
V– = –22 V
T
A
= 25_C
I
D(on)
Leakage Currents vs. Analog Voltage
–15
–10
–5
0
5
10
15
20
V
ANALOG
– Analog Voltage (V)
Leakage Current vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
V
S,
V
D
=
"14
V
30
Q
S,
Q
D
– Charge Injection vs. Analog Voltage
20
I S,I D – Current
Q – Charge (pC)
100 pA
10
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
–10
0
I
S(off)
, I
D(off)
10 pA
–20
1 pA
–55
–35
–15
5
25
45
65
85
105 125
–30
–15
–10
–5
0
5
10
15
Temperature (_C)
V
ANALOG
– Analog Voltage (V)
Off Isolation vs. Frequency
120
110
100
90
OIRR (dB)
R
L
= 50
W
80
70
60
50
40
10 k
100 k
1M
10 M
V+ = +15 V
V– = –15 V
f – Frequency (Hz)
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
4-5
VISHAY [ VISHAY TELEFUNKEN ]
