DG411/412/413
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
Logic
Input
V
L
V
S1
V
S2
S
1
IN
1
S
2
IN
2
GND
V–
D
2
V
O2
Switch
Output
R
L1
300
W
R
L2
300
W
C
L2
35 pF
C
L1
35 pF
Switch
Output
0V
V
S2
V
O2
0V
V+
D
1
V
O1
3V
50%
0V
V
S1
V
O1
90%
90%
t
D
t
D
–15 V
C
L
(includes fixture and stray capacitance)
FIGURE 3.
Break-Before-Make (DG413)
DV
O
+5 V
+15 V
V
O
IN
X
OFF
V
O
C
L
10 nF
V–
IN
X
OFF
ON
Q =
DV
O
x C
L
OFF
ON
OFF
R
g
V
L
S
IN
V+
D
V
g
3V
GND
–15 V
IN
X
dependent on switch configuration Input polarity determined
by sense of switch.
FIGURE 4.
Charge Injection
C
+5 V
+15 V
C
V
L
V
S
R
g
= 50
W
0V, 2.4 V
S
2
NC
IN
2
GND
V
S
V
O
S
1
IN
1
V+
D
1
50
W
D
2
R
L
V–
C
V
O
0V, 2.4 V
X
TALK
Isolation = 20 log
C = RF bypass
–15 V
FIGURE 5.
Crosstalk
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-7
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