GSOT03C to GSOT36C
Vishay Semiconductors
Two-Line ESD-Protection in SOT-23
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER
Peak pulse current
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
8
345
P
PP
400
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
VALUE
8
UNIT
A
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER
Peak pulse current
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
5
235
P
PP
240
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
VALUE
5
UNIT
A
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER
Peak pulse current
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
3.5
248
P
PP
252
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
VALUE
3.5
UNIT
A
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
BiAs-MODE
(2-line bidirectional asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line
is between 0 V (ground level) and the specified maximum reverse working voltage (V
RWM
) the protection diode between pin 1
and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
C
) is defined by the breakthrough voltage (V
BR
) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and
asymmetrical (BiAs).
www.vishay.com
4
For technical questions, contact:
ESDprotection@vishay.com
Document Number: 85824
Rev. 2.0, 22-Jul-10
VISHAY [ VISHAY TELEFUNKEN ]
