GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 1 μA
at V
R
= 15 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 8 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 8 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 7.5 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
V
F
C
D
MIN.
-
15
-
16.5
-
-
-
-
-
-
TYP.
-
-
-
18
19.4
24.8
1
1.8
90
35
MAX.
2
-
1
-
23.5
28.8
1.2
-
120
-
UNIT
lines
V
μA
V
V
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 1 μA
at V
R
= 24 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 5 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 5 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 12 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
V
F
C
D
MIN.
-
24
-
27
-
-
-
-
-
-
TYP.
-
-
-
30
34
41
1
1.4
65
20
MAX.
2
-
1
-
41
47
1.2
-
80
-
UNIT
lines
V
μA
V
V
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 1 μA
at V
R
= 36 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 3.5 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 3.5 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 18 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
V
F
C
D
MIN.
-
36
-
39
-
-
-
-
-
-
TYP.
-
-
-
43
49
59
1
1.3
52
12
MAX.
2
-
1
-
60
71
1.2
-
65
-
UNIT
lines
V
μA
V
V
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
BiSy-MODE
(1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (V
C
) is defined by the breakthrough
voltage (V
BR
) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact:
ESDprotection@vishay.com
www.vishay.com
7
VISHAY [ VISHAY TELEFUNKEN ]
