GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 5 μA
at V
R
= 8.5 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 18 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 4 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
C
D
MIN.
-
8.5
-
9.5
-
-
-
-
TYP.
-
-
-
10.7
11.7
18.5
80
60
MAX.
1
-
5
-
14
22.2
125
-
UNIT
lines
V
μA
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 1 μA
at V
R
= 12.5 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 12 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 7.5 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
C
D
MIN.
-
12.5
-
13.5
-
-
-
-
TYP.
-
-
-
15.7
16.4
23.4
58
36
MAX.
1
-
1
-
19.7
28.1
75
-
UNIT
lines
V
μA
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 1 μA
at V
R
= 15.5 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 8 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 7.5 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
C
D
MIN.
-
15.5
-
17
-
-
-
-
TYP.
-
-
-
18.7
20.4
26.6
45
25
MAX.
1
-
1
-
24.5
30.6
60
-
UNIT
lines
V
μA
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 1 μA
at V
R
= 24.5 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 5 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 12 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
C
D
MIN.
-
24.5
-
27.5
-
-
-
-
TYP.
-
-
-
30.7
34
40
33
18
MAX.
1
-
1
-
41
48
40
-
UNIT
lines
V
μA
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact:
ESDprotection@vishay.com
www.vishay.com
9
VISHAY [ VISHAY TELEFUNKEN ]
