H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output,
With Base Connection, High BV
CER
Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
H11D1
Collector emitter voltage
H11D2
H11D3
H11D4
H11D1
Collector base voltage
H11D2
H11D3
H11D4
Emitter base voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering: distance
to seating plane
≥
1.5 mm
per DIN IEC 112/VDE 0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
between emitter and detector,
refer to climate DIN 50014, part 2,
Nov. 74
V
ISO
5300
≥
0.4
≥
7
≥
7
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
V
RMS
mm
mm
mm
V
CE
V
CE
V
CE
V
CE
V
CBO
V
CBO
V
CBO
V
CBO
V
BEO
I
C
P
diss
300
300
200
200
300
300
200
200
7
100
300
V
V
V
V
V
V
V
V
V
mA
mW
t
≤
10 µs
V
R
I
F
I
FSM
P
diss
6
60
2.5
100
V
mA
A
mW
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
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For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
Rev. 1.5, 19-Nov-07
VISHAY [ VISHAY TELEFUNKEN ]
