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IL410 参数 Datasheet PDF下载

IL410图片预览
型号: IL410
PDF下载: 下载PDF文件 查看货源
内容描述: 光电耦合器,光敏可控硅输出,零交叉,高dv / dt ,低输入电流 [Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current]
分类和应用: 可控硅光电
文件页数/大小: 10 页 / 726 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IL410/ IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low
Input Current
Features
High Input Sensitivity
I
FT
= 2.0 mA, PF = 1.0
I
FT
= 5.0 mA, PF
1.0
300 mA On-State Current
Zero Voltage Crossing Detector
600/800 V Blocking Voltage
High Static dV/dt 10 kV/µs
Inverse Parallel SCRs Provide Commutating
dV/dt >10 kV/µs
• Very Low Leakage < 10
µA
Isolation Test Voltage 5300 V
RMS
Small 6-Pin DIP Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
C 2
NC 3
ZCC*
6 MT2
5 NC
4 MT1
*Zero Crossing Circuit
i179030
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• FIMKO
Applications
Solid-state relays
Industrial controls
Office equipment
Consumer appliances.
Description
The IL410/ IL4108 consists of a GaAs IRLED optically
coupled to a photosensitive zero crossing TRIAC net-
work. The TRIAC consists of two inverse parallel con-
nected monolithic SCRs. These three semi-
conductors are assembled in a six pin dual in-line
package.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of less than
2.0 mA (DC).
The IL410/ IL4108 uses two discrete SCRs resulting
in a commutating dV/dt greater than 10 kV/µs. The
use of a proprietary dV/dt clamp results in a static dV/
dt of greater than 10 kV/µs. This clamp circuit has a
MOSFET that is enhanced when high dV/dt spikes
occur between MT1 and MT2 of the TRIAC. When
conducting, the FET clamps the base of the pho-
totransistor, disabling the first stage SCR predriver.
The zero cross line voltage detection circuit consists
of two enhancement MOSFETS and a photodiode.
The inhibit voltage of the network is determined by the
enhancement voltage of the N-channel FET. The P-
channel FET is enabled by a photocurrent source that
permits the FET to conduct the main voltage to gate
on the N-channel FET. Once the main voltage can
enable the N-channel, it clamps the base of the pho-
totransistor, disabling the first stage SCR predriver.
The 600/800 V blocking voltage permits control of off-
line voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as
380 VAC.
The IL410/ IL4108 isolates low-voltage logic from
120, 240, and 380 VAC lines to control resistive,
inductive, or capacitive loads including motors, sole-
noids, high current thyristors or TRIAC and relays.
Document Number 83627
Rev. 1.4, 26-Apr-04
www.vishay.com
1