IRF830, SiHF830
Vishay Siliconix
600
E
AS
, Single Pulse Energy (mJ)
500
400
300
200
100
0
V
DD
= 50
V
25
50
75
100
I
D
2.0 A
2.8 A
Bottom 4.5 A
Top
125
150
91063_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12
V
10
V
Q
GS
Q
G
0.2
µF
0.3
µF
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91063
S-81290-Rev. A, 16-Jun-08