IRFBE30, SiHFBE30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
800
-
-
-
V
V/°C
V
-
0.9
2.0
-
-
-
-
-
-
4.0
VGS
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.5 Ab
=
20 V
-
100
100
500
3.0
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = 100 V, ID = 2.5 Ab
2.5
S
VGS = 0 V,
VDS = 25 V,
Input Capacitance
Ciss
Coss
Crss
-
-
-
1300
310
-
-
-
Output Capacitance
pF
nC
Reverse Transfer Capacitance
190
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
-
-
-
-
78
ID = 4.1 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Source Charge
Qgs
VGS = 10 V
9.6
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
45
-
12
33
82
30
-
VDD = 400 V, ID = 4.1 A
G = 12 Ω, RD = 95 Ω, see fig. 10b
ns
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
4.1
16
A
G
Pulsed Diode Forward Currenta
ISM
S
TJ = 25 °C, IS = 4.1 A, VGS = 0 Vb
1.8
720
2.7
V
Body Diode Voltage
VSD
trr
-
-
-
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
480
1.8
ns
µC
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91118
S-81262-Rev. A, 07-Jul-08
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