MBR0530
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
0.1 A
Maximum forward voltage drop
V
FM (1)
0.5 A
0.1 A
0.5 A
Maximum reverse leakage current
Maximum junction capacitance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
dV/dt
V
R
= 15 V
V
R
= 30 V
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.375
0.430
0.250
0.350
20
130
90
10 000
µA
pF
V/µs
V
UNITS
Schottky Diode, 0.5 A
T
J
= 125 °C
T
J
= 25 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) T
J
= 25 °C
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL
R
thJA
TEST CONDITIONS
VALUES
- 65 to 150
UNITS
°C
Mounted on PC board FR4 with minimum pad size
1" square pad size (1 x 0.5" for each lead) on FR4 board
150
°C/W
200
0.012
g
Case style SOD-123
BYWLC
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93435
Revision: 22-Aug-08
VISHAY [ VISHAY TELEFUNKEN ]
