Maximum Ratings
T
A
=25
°
C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t
≤
10
µ
s)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 V
RMS
Creepage ..............................................................................................
≥
7.0 mm
Clearance .............................................................................................
≥
7.0 mm
Isolation Thickness between Emitter and Detector ...............................
≥
0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................................................................10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................................................................ 10
11
Ω
Storage Temperature................................................................ –55
°
C to +150
°
C
Operating Temperature ............................................................ –55
°
C to +100
°
C
Junction Temperature................................................................................ 100
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm) ...................................................... 260
°
C
4N25/26/27/28—Characteristics
T
A
=25
°
C
Emitter
Forward Voltage*
Reverse Current*
Capacitance
Detector
Breakdown Voltage*
Collector-Emitter
Emitter-Collector
Collector-Base
BV
CEO
BV
ECO
BV
CBO
—
—
30
7.0
70
—
—
—
—
—
—
5.0
10
2.0
6.0
—
—
—
50
100
20
—
nA
nA
pF
V
Symbol
Min.
—
—
—
Typ.
1.3
0.1
25
Max.
1.5
100
—
Unit
V
Condition
V
F
I
R
C
O
I
F
=50 mA
V
R
=3.0 V
V
R
=0
µ
A
pF
I
C
=1.0 mA
I
E
=100
µ
A
I
C
=100
µ
A
V
CE
=10 V, (base open)
V
CB
=10 V, (emitter open)
V
CE
=0
I
CEO
(dark)*
I
CBO
(dark)*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N25/26/27
4N28
C
CE
4N25/26
4N27/28
CTR
20
10
50
30
—
—
—
—
—
0.5
2.0
—
—
—
—
—
0.5
—
—
—
%
V
CE
=10 V,
I
F
=10 mA
Isolation Voltage*
4N25
4N26/27
4N28
V
IO
2500
1500
500
V
Peak, 60 Hz
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
Rise and Fall Times
* Indicates JEDEC registered values
Document Number: 83717
Revision 17-August-01
V
CE(sat)
R
IO
C
IO
t
r
,
t
f
—
100
—
—
V
G
Ω
pF
I
CE
=2.0 mA,
I
F
=50 mA
V
IO
=500 V
f=1.0 MHz
µ
s
I
F
=10 mA
V
CE
=10 V,
R
L
=100
Ω
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