MOC8111/MOC8112
Vishay Semiconductors
Optocoupler, Phototransistor Output,
No Base Connection
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
COUPLER
Isolation test voltage between emitter
and detector refer to standard climate
23/50 DIN 50014
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
(2)
max. 10 s, dip soldering distance
to seating plane
≥
1.5 mm
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
CTI
R
IO
R
IO
T
stg
T
amb
T
sld
V
ISO
5300
≥
7
≥
7
≥
4
175
10
12
10
11
- 55 to + 150
- 55 to + 100
260
Ω
Ω
°C
°C
°C
V
RMS
mm
mm
mm
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse leakage current
Junction capacitance
OUTPUT
Collector emitter breakdown voltage
Collector emitter leakage current
Emitter collector breakdown voltage
Collector emitter capacitance
COUPLER
Collector saturation voltage
I
C
= 500 µA, I
F
= 10 mA
V
CEsat
0.15
0.4
V
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
I
C
= 1.0 µA
V
CE
= 10 V
I
E
= 10 µA
V
CE
= 0 V, f = 1.0 MHz
BV
CEO
I
CEO
BV
ECO
C
CE
7.0
7.0
30
1.0
50
V
nA
V
pF
I
F
= 10 mA
V
R
= 6.0 V
V = 0 V, f = 1.0 MHz
V
F
I
R
C
j
1.15
0.05
25
1.5
10
V
µA
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
I
F
= 10 mA, V
CE
= 10 V
PART
MOC8111
MOC8112
SYMBOL
CTR
CTR
MIN.
20
50
TYP.
MAX.
UNIT
%
%
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Turn-off time
TEST CONDITION
V
CC
= 10 V, R
L
= 100
Ω
I
C
= 2.0 mA, see figure 1
V
CC
= 10 V, R
L
= 100
Ω
I
C
= 2.0 mA, see figure 1
SYMBOL
t
on
t
off
MIN.
TYP.
7.5
5.7
MAX.
20
20
UNIT
µs
µs
www.vishay.com
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83661
Rev. 1.5, 11-Jan-08
VISHAY [ VISHAY TELEFUNKEN ]
