Si4404DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
23
17
r
DS(on)
(W)
0.0065 @ V
GS
= 10 V
0.008 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4404DY
Si4404DY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
S
N-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
23
19
60
2.9
3.5
2.2
Steady State
Unit
V
15
12
A
1.3
1.6
1
- 55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
C/W
1
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