Si4532DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
R
DS(ON)
(W)
0.065 @ V
GS
= 10 V
0.095 @ V
GS
= 4.5 V
P-Channel
–30
0.085 @ V
GS
= –10 V
0.19 @ V
GS
= –4.5 V
I
D
(A)
"3.9
"3.1
"3.5
"2.5
D
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
A
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
A
Maximum Power Dissipation
A
Dissi ation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N CHANNEL
30
"20
"3.9
"3.1
"20
1.7
2.0
W
1.3
–55 to 150
_C
P CHANNEL
–30
"20
"3.5
"2.8
"20
–1.7
A
V
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
A
Notes
A. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70155.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
SYMBOL
R
thJA
N OR P CHANNEL
62.5
UNIT
_C/W
3-1
VISHAY [ VISHAY TELEFUNKEN ]
