New Product
SUD19P06-60
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 60
r
DS(on)
(Ω)
0.060 at V
GS
= - 10 V
0.077 at V
GS
= - 4.5 V
I
D
(A)
- 19
- 16.8
d
FEATURES
Q
g
(Typ)
26
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
TO-252
S
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
Ordering Information:
SUD19P06-60-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
- 60
± 20
- 18.3
- 8.19
- 30
- 22
24.2
38.5
c
2.3
b, c
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Notes:
a. Duty cycle
≤
1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on T
C
= 25 °C.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
17
45
2.7
Maximum
21
55
3.25
Unit
°C/W
Document Number: 69253
S-72191-Rev. A, 22-Oct-07
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