VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Table 1: Electro-Optical Specifications
(1)
Symbol
V
SS
I
DD
PSRR
λ
f
C
BW
S
R
O
V
O
R
D
V
DC
∆V
DC
NEP
O
V
NO
DCD
I
OUT
PDJ
----
PPJ
t
R
t
F
Advance Product Information
VSC7809
Typ
(2)
3.3
23
-10
840
1.8
1100
-21
25
0.26
1.2
-
-
1
1.0
-
2.6
35
100
190
-
-
30
0.4
-
-
200
1.4
1.25
4.5
-
60
-
250
400
400
Parameter
Supply Voltage
Supply Current
Power Supply Rejection Ratio
Wavelength
Low Frequency Cutoff
Optical Modulation Bandwidth
Sensitivity
Single Ended Output Impedance
Differential Output Voltage
Differential Responsivity
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
Output Drive Current
Pattern Dependent Jitter
Optically Active Area
PP Jitter
Rise Time
Fall Time
Min
3.0
14
-
700
-
800
-20
20
0.2
0.8
1.0
-
-
-
-
2.0
-
-
-
-
-
Max
3.6
40
-
850
2.5
-
Units
V
mA
dB
nm
MHz
MHz
dBm
Ω
V
mV/µW
V
mV
µW
rms
mV rms
%
mA
ps
µm
ps
ps
ps
Conditions
Frequencies up to 40MHz
Use external filter to get
PSRR of -35dB
(3)
.
-3db, P
(4)
= -15dBm @
50MHz
-3db,
P = -15dBm @ 50MHz
1.25Gb/s, BER10
-12(5)
P = -5dBm,
R
LOAD
= 100Ω differential
R
LOAD
= 100Ω
P = -15dBm @ 50MHz
P = 0mW
P = 0mW
P = -5dBm
P = -5dBm
P = -5dBm
+/-10% Voltage Window
Diameter
P = -5 dBm
20%-80% P = -5dBm
20%-80% P = -5dBm
Notes: (1) Specified over 0°C (ambient) to 70°C (case).
(2) Typical conditions 25°C and 3.3V power supply.
(3) See Note 1 in Application Note 48.
(4) P = Incident Optical Power
(5) See Note 2 In Application Note 48.
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52195-0, Rev 2.4
04/05/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
