VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7939
Bare Die Pad Descriptions
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
Figure 1: Pad Assignments
1773µm (0.0698")
Pad 11
VCC1
Pad 12
GND1
Pad 13
LATCH
Pad 14
ENABLE
Pad 10
CLK-
Pad 9
CLK+
Pad 8
VCC1
Pad 7
GND1
Pad 6
VCC1
Pad 5
DATA-
Pad 4
DATA+
Pad 3
VCC1
Pad 2
GND1
Pad 1
GND2
(Pin 7)
(Pin 6)
(Pin 5)
(Pin 4)
(Pin 3)
(Pin 2)
(Pin 1)
(Pin 8)
(Pin 32)
Pad 48
VCC2
Pad 47
BIASMAX
Pad 46
MODSET
Pad 45
GND2
(Pin 9)
(Pin 31)
20µm
(0.0008")
Pad 15
(Pin 10)
DISABLE
Pad 16
GND1
Pad 17
(Pin 11)
BIASMON
Pad 18
(Pin 12)
MODMON
(Pin 30)
(Pin 29)
Pad 44
APCSET
Pad 43
RESERVED
Pad 42
GND3
Pad 41
PB_GND
(Pin 28)
2233µm
(0.0879")
VSC7939
Pad 19
FAIL
Pad 20
GND4
Pad 21
PB_GND
(Pin 13)
(Pin 27)
Pad 40
GND3
Pad 39
PB_GND
Pad 38
CAPC
Pad 37
VCC3
Pad 36
GND3
Pad 22
(Pin 14)
APCFILT
Pad 23
GND4
Pad 24
VCC4
Pad 25
BIAS
(Pin 15)
(Pin 26)
(Pin 16)
(Pin 25)
(Pin 17)
(Pin 18)
Pad 26
PB_GND1
Pad 27
VCC4
Pad 28
DB_OUT+
(Pin 19)
Pad 29
OUT+
(Pin 20)
Pad 30
OUT-
Pad 31
DB_OUT-
(Pin 21)
Pad 32
VCC4
(Pin 22)
Pad 33
GND4
(Pin 23)
Pad 34
GND3
(Pin 24)
Pad 35
MD
1773µm x 2233µm (0.0698" x 0.0879")
625
µm (0.0246
"
)
115
µm (0.0045
"
)
95µm x 95µm (0.0037
"
x 0.0037
"
)
Pad to Pad Clearance:
20µm (0.0008
"
)
Pad Passivation Opening:
95µm x 95µm (0.0037
"
x 0.0037
"
)
Scribe Size:
75µm (0.0030
"
)
Die Size:
Die Thickness:
Pad Pitch:
Pad Size:
75µm
(0.0030")
G52350-0, Rev 3.2
02/26/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 5
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