VG26VS17405FJ 参数 Datasheet PDF下载

VIS

Description

VG26(V)(S)17405FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access

mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,

portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR

cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ.

Features

• Single 5V(

±

10 %) or 3.3V(+10%,-5%) only power supply

• High speed t

RAC

acess time: 50/60ns

• Low power dissipation

- Active wode : 5V version 660/605 mW (Mas)

3.3V version 432/396 mW (Mas)

- Standby mode: 5V version 1.375 mW (Mas)

3.3V version 0.54 mW (Mas)

• Extended - data - out(EDO) page mode access

• I/O level: TTL compatible (Vcc = 5V)

LVTTL compatible (Vcc = 3.3V)

• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)

• 4 refresh modesh:

- RAS only refresh

- CAS - before - RAS refresh

- Hidden refresh

- Self-refresh(S-version)

Document:1G5-0162

Rev.1

Page 1