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VG4632321AQ-55R 参数 Datasheet PDF下载

VG4632321AQ-55R图片预览
型号: VG4632321AQ-55R
PDF下载: 下载PDF文件 查看货源
内容描述: 524,288x32x2位CMOS同步图形RAM [524,288x32x2-Bit CMOS Synchronous Graphic RAM]
分类和应用:
文件页数/大小: 81 页 / 1954 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VIS
23,56,24,
57
DQM0-
DQM3
97,98,100,
1,3,4,6,7,
60,61,63,
64,68,69,
71,72,9,
10,12,13,
17,18,20,
21,74,75,
77, 78,80,
81, 83, 84
30,36-45,
52,58,
86-95
2,8,14,22,
59,67,73,
79
5,11,19,
62,70,76,
82,99
15,35,65,
96
16,46,66,
85
DQ0-
DQ31
Preliminary
VG4632321A
524,288x32x2-Bit
CMOS Synchronous Graphic RAM
Input
Data Input/Output Mask:
DQM0-DQM3 are byte specific, nonpersistent I/O buffer
controls. The I/O buffers are placed in a high-z state when DQM is sampled HIGH.
Input data is masked when DQM is sampled HIGH during a write cycle. Output data
is masked (two-clock latency) when DQM is sampled HIGH during a read cycle.
DQM3 masks DQ31-DQ24, DQM2 masks DQ23-DQ16, DQM1 masks DQ15-DQ8,
and DQM0 masks DQ7-DQ0.
Input/
Data I/O:
The DQ0-31 input and output data are synchronized with the positive
Output edges of CLK. The I/Os are byte-maskable during Reads and Writes. The DQs also
serve as column/byte mask inputs during Block Writes.
NC
-
No Connect:
These pins should be left unconnected.
V
DDQ
Supply
DQ Power:
Provide isolated power to DQs for improved noise immunity.
V
SSQ
Supply
DQ Ground:
Provide isolated ground to DQs for improved noise immunity.
V
DD
V
SS
Supply
Power Supply:
+3.3V
Supply
Ground
±
0.3V
Document:
Rev.1
Page 4