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W364M72V-125SBM 参数 Datasheet PDF下载

W364M72V-125SBM图片预览
型号: W364M72V-125SBM
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mx72同步DRAM [64Mx72 Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 16 页 / 495 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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White Electronic Designs
64Mx72 Synchronous DRAM
FEATURES
High Frequency = 100, 125MHz
Package:
• 219 Plastic Ball Grid Array (PBGA), 32 x 25mm
3.3V ±0.3V power supply for core and I/Os
Fully Synchronous; all signals registered on positive
edge of system clock cycle
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable Burst length 1,2,4,8 or full page
8,192 refresh cycles
Commercial, Industrial and Military Temperature
Ranges
Organized as 64M x 72
Weight: W364M72V-XSBX - TBD grams typical
W364M72V-XSBX
ADVANCED*
BENEFITS
66% SPACE SAVINGS
Reduced part count from 9 to 1
Reduced I/O count
• 55% I/O Reduction
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
GENERAL DESCRIPTION
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS,
dynamic random-access, memory using 9 chips containing
512M bits. Each chip is internally configured as a quad-
bank DRAM with a synchronous interface. Each of the
chip’s 134,217,728-bit banks is organized as 8,192 rows
by 2,048 columns by 8 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
ACTUAL SIZE
White Electronic Designs
W364M72V-XSBX
25
32
Area = 800mm
2
I/O Count = 219 Balls
SAVINGS
– Area: 66% – I/O Count: 55%
Discrete Approach
11.9
11.9
11.9
11.9
11.9
11.9
11.9
11.9
11.9
22.3
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
Area: 9 x 265mm
2
= 2,385mm
2
January 2005
Rev. 1
1
I/O Count: 9 x 54 pins = 486 pins
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com