欢迎访问ic37.com |
会员登录 免费注册
发布采购

W3E32M72S-250SBM 参数 Datasheet PDF下载

W3E32M72S-250SBM图片预览
型号: W3E32M72S-250SBM
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72 DDR SDRAM [32Mx72 DDR SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 19 页 / 465 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
 浏览型号W3E32M72S-250SBM的Datasheet PDF文件第4页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第5页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第6页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第7页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第9页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第10页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第11页浏览型号W3E32M72S-250SBM的Datasheet PDF文件第12页  
White Electronic Designs
FIG. 4 CAS LATENCY
T0
CLK
CLK
COMMAND
READ
NOP
CL
=
2
DQS
DQ
NOP
NOP
BA
1
BA
0
A
12
A
11
A
10
A
9
A
8
W3E32M72S-XSBX
FIG. 5 EXTENDED MODE REGISTER
DEFINITION
T3
T3n
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
Address Bus
T1
T2
T2n
14 13 12 11 10 9 8
01
11
7
6
5
4
3
2
1
0
Operating Mode
DS DLL
Extended Mode
Register (Ex)
E0
DLL
Enable
Disable
T0
CLK
CLK
T1
T2
T2n
T3
T3n
0
1
E1
Drive Strength
Normal
Reduced
COMMAND
READ
NOP
CL
=
2.5
NOP
NOP
0
1
DQS
DQ
Burst
Length = 4 in
the cases shown
Shown
with
nominal tAC and nominal tDSDQ
DATA
TRANSITIONING
DATA
DON'T CARE
E12 E11 E10 E9
0
-
0
-
0
-
0
-
E8
0
-
E7
0
-
E6
0
-
E5
0
-
E4
0
-
E3
0
-
E2
0
-
E1, E0
Valid
-
Operating Mode
Reserved
Reserved
1. E14 and E13 must be "0, 1" to select the Extended Mode Register (vs. the base Mode Register)
2. The QFC# function is not supported.
must be activated prior to any READ or WRITE commands
being issued to that bank. A PRECHARGE command will
be treated as a NOP if there is no open row in that bank
(idle state), or if the previously open row is already in the
process of precharging.
“earliest valid stage” is determined as if an explicit
precharge command was issued at the earliest possible
time, without violating t
RAS
(MIN).The user must not issue
another command to the same bank until the precharge
time (t
RP
) is completed.
AUTO PRECHARGE
AUTO PRECHARGE is a feature which performs the
same individual-bank PRECHARGE function described
above, but without requiring an explicit command. This is
accomplished by using A10 to enable AUTO PRECHARGE
in conjunction with a specific READ or WRITE command.
A precharge of the bank/row that is addressed with the
READ or WRITE command is automatically performed
upon completion of the READ or WRITE burst. AUTO
PRECHARGE is nonpersistent in that it is either enabled
or disabled for each individual READ or WRITE command.
The device supports concurrent auto precharge if the
command to the other bank does not interrupt the data
transfer to the current bank.
AUTO PRECHARGE ensures that the precharge is
initiated at the earliest valid stage within a burst. This
BURST TERMINATE
The BURST TERMINATE command is used to truncate
READ bursts (with auto precharge disabled). The most
recently registered READ command prior to the BURST
TERMINATE command will be truncated. The open page
which the READ burst was terminated from remains
open.
AUTO REFRESH
AUTO REFRESH is used during normal operation of the
DDR SDRAM and is analogous to CAS-BEFORE-RAS
(CBR) REFRESH in conventional DRAMs. This command
is nonpersistent, so it must be issued each time a refresh
is required. All banks must be idle before an AUTO
REFRESH command is issued.
The addressing is generated by the internal refresh
controller. This makes the address bits “Don’t Care”
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2006
Rev. 6
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com