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W764M32V120SBM 参数 Datasheet PDF下载

W764M32V120SBM图片预览
型号: W764M32V120SBM
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mx32闪存多芯片封装的3.0V页模式闪存 [64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 16 页 / 505 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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White Electronic Designs
64Mx32 Flash Multi-Chip Package
3.0V Page Mode Flash Memory
FEATURES
Single power supply operation
• 3 volt read, erase, and program operations
I/O Control
• All input levels (address, control, and DQ input
levels) and outputs are determined by voltage on
V
IO
input. V
IO
range is 1.65 to V
CC
Secured Silicon Sector region
• 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
• May be programmed and locked at the factory or
by the customer
Flexible sector architecture
• Five hundred twelve 64 Kword (128 Kbyte) sectors
• Two hundred fifty-six 64 Kword (128 Kbyte)
sectors
• One hundred twenty-eight 64 Kword (128 Kbyte)
sectors
Compatibility with JEDEC standard
• Provides software compatibility for single-power
supply flash, and superior inadvertent write
protection
100,000 erase cycles per sector typical
20-year data retention typical
Software features
W764M32V-XSBX
ADVANCED*
• Program Suspend and Resume: read other
sectors before programming operation is
completed
• Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
• Data# polling and toggle bits provide status
• Unlock Bypass Program command reduces overall
multiple-word programming time
• CFI (Common Flash Interface) compliant: allows
host system to identify and accommodate multiple
flash devices
Hardware features
• Advanced Sector Protection
• WP#/ACC input accelerates programming
time (when high voltage is applied) for greater
throughput during system production. Protects
first or last sector regardless of sector protection
settings
• Hardware reset input (RESET#) resets device
• Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
PERFORMANCE CHARACTERISTICS
High Performance
• 100, 120 ns
• 8-word/16-byte page read buffer
• 25 ns page read times
• 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Package option
• 107 BGA, 14mm x 17mm
• 1.0mm pitch
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com