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WE256K8-200CQA 参数 Datasheet PDF下载

WE256K8-200CQA图片预览
型号: WE256K8-200CQA
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8 CMOS EEPROM , WE512K8 - XCX , SMD 5962-93091 [512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 617 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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White Electronic Designs
READ
Figure 5 shows Read cycle waveforms. A read cycle begins
with selection address, chip select and output enable. Chip
select is accomplished by placing the CS# line low. Output
enable is done by placing the OE# line low. The memory
WE512K8, WE256K8,
WE128K8-XCX
places the selected data byte on I/O0 through I/O7 after the
access time. The output of the memory is placed in a high
impedance state shortly after either the OE# line or CS# line
is returned to a high level.
FIGURE 5 – READ WAVEFORMS
ADDRESS
CS#
OE#
OUTPUT
NOTE:
OE# may be delayed up to t
ACS
-t
OE
after the falling edge of CS# without impact on t
OE
or by t
ACC
-t
OE
after an address change without impact on t
ACC
.
AC READ CHARACTERISTICS (See Figure 5)
FOR WE512K8-XCX
V
CC
= 5.0V, V
SS
= 0V, -55°C ≤ T
A
≤ +125°C
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change, OE# or CS#
Output Enable to Output Valid
Chip Select or Output Enable to High Z Output
Symbol
trc
tacc
tacs
toh
toe
tdf
-150
Min
150
Max
150
150
0
85
70
0
85
70
Min
200
-200
Max
200
200
0
100
70
Min
250
-250
Max
250
250
0
125
70
Min
300
-300
Max
300
300
Unit
ns
ns
ns
ns
ns
ns
FOR WE256K8-XCX and WE128K8-XCX
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change, OE# or CS#
Output Enable to Output Valid
Chip Select or Output Enable to High Z Output
Symbol
trc
tacc
tacs
toh
toe
tdf
-150
Min
150
Max
150
150
0
85
70
0
85
70
Min
200
-200
Max
200
200
Unit
ns
ns
ns
ns
ns
ns
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2000
Rev. 1
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com