欢迎访问ic37.com |
会员登录 免费注册
发布采购

WED3DL328V10BC 参数 Datasheet PDF下载

WED3DL328V10BC图片预览
型号: WED3DL328V10BC
PDF下载: 下载PDF文件 查看货源
内容描述: SDRAM 8Mx32 [8Mx32 SDRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 27 页 / 1197 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
 浏览型号WED3DL328V10BC的Datasheet PDF文件第3页浏览型号WED3DL328V10BC的Datasheet PDF文件第4页浏览型号WED3DL328V10BC的Datasheet PDF文件第5页浏览型号WED3DL328V10BC的Datasheet PDF文件第6页浏览型号WED3DL328V10BC的Datasheet PDF文件第8页浏览型号WED3DL328V10BC的Datasheet PDF文件第9页浏览型号WED3DL328V10BC的Datasheet PDF文件第10页浏览型号WED3DL328V10BC的Datasheet PDF文件第11页  
White Electronic Designs
COMMAND TRUTH TABLE
CKE
Function
Mode Register Set
Auto Refresh (CBR)
Refresh
Entry Self Refresh
Single Bank Precharge
Precharge
Precharge all Banks
Bank Activate
Write
Write with Auto Precharge
Read
Read with Auto Precharge
Burst Termination
No Operation
Device Deselect
Clock Suspend/Standby Mode
Data Write/Output Disable
Data Mask/Output Disable
Entry
Power Down Mode
Exit
Register
Previous Current
Cycle
Cycle
H
X
H
H
H
L
H
X
H
X
H
X
H
X
H
X
H
X
H
X
H
X
H
X
H
X
L
X
H
X
H
X
X
L
X
H
CE#
L
L
L
L
L
L
L
L
L
L
L
L
H
X
X
X
H
H
RAS#
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
CAS#
L
L
L
H
H
H
L
L
L
L
H
H
X
X
X
X
X
X
WE#
L
H
H
L
L
H
L
L
L
H
L
H
X
X
X
X
X
X
DQM
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
X
X
BA
WED3DL328V
A10/AP
A9-0
A11
Notes
X
X
BA
X
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
OP CODE
X
X
X
X
L
X
H
X
Row Address
L
Column
H
Column
L
Column
H
Column
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
2
2
2
2
2
2
3
4
5
5
6
6
Notes:
1. All of the SDRAM operations are defined by states of CE#, WE#, RAS#, CAS#, and DQM at the positive rising edge of the clock.
2. Bank Select (BA), if BA = 0 then bank A is selected, if BA = 1 then bank B is selected.
3. During a Burst Write cycle there is a zero clock delay, for a Burst Read cycle the delay is equal to the CAS# latency.
4. During normal access mode, CKE is held high and CK is enabled. When it is low, it freezes the internal clock and extends data Read and Write operations. One
clock delay is required for mode entry and exit.
5. The DQM has two functions for the data DQ Read and Write operations. During a Read cycle, when DQM goes high at a clock timing the data outputs are disabled
and become high impedance after a two clock delay. DQM also provides a data mask function for Write cycles. When it activates, the Write operation at the
clock is prohibited (zero clock latency).
All banks must be precharged before entering the Power Down Mode. The Power Down Mode does not preform any Refresh operations, therefore the device can’t
remain in this mode longer than the Refresh period (t
REF
) of the device. One clock delay is required for mode entry and exit.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June, 2002
Rev. 1
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com