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WED3EG6418S-D4 参数 Datasheet PDF下载

WED3EG6418S-D4图片预览
型号: WED3EG6418S-D4
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB- 16Mx64 DDR SDRAM UNBUFFERED W / PLL [128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 7 页 / 81 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3EG6418S-D4
FINAL
128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL
FEATURES
Double-data-rate architecture
Speed of 100MHz, 133MHz and 166MHz
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2,5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
JEDEC standard 200 pin SO-DIMM package
Power Supply: 2.5V ± 0.25V
Synchronous design allows precise cycle control
with the use of system clock. Data I/O transactions
are possible on both edges and Burst Lenths allow
the same device to be useful for a variety of high
bandwidth, high performance memory system
applications.
DESCRIPTION
The WED3DG6418S is a 16Mx64 Double Data Rate
SDRAM memory module based on 128Mb DDR
SDRAM component. The module consists of eight
16Mx8 DDR SDRAMs in 66 pin TSOP package
mounted on a 200 Pin FR4 substrate.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Oct. 2002
Rev. # 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com