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WEDPN16M64VR-133B2I 参数 Datasheet PDF下载

WEDPN16M64VR-133B2I图片预览
型号: WEDPN16M64VR-133B2I
PDF下载: 下载PDF文件 查看货源
内容描述: 16MX64注册了的同步DRAM [16Mx64 REGISTERED SYNCHRONOUS DRAM]
分类和应用: 内存集成电路动态存储器
文件页数/大小: 15 页 / 448 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WEDPN16M64VR-XB2X  
White Electronic Designs  
a specified time (tRP) after the PRECHARGE command is  
issued. InputA10 determines whether one or all banks are  
to be precharged, and in the case where only one bank  
is to be precharged, inputs BA0, BA1 select the bank.  
Otherwise BA0, BA1 are treated as “Don’t Care.” Once a  
bank has been precharged, it is in the idle state and must  
be activated prior to any READ or WRITE commands being  
issued to that bank.  
ACTIVE  
The ACTIVE command is used to open (or activate) a  
row in a particular bank for a subsequent access. The  
value on the BA0, BA1 inputs selects the bank, and  
the address provided on inputs A0-A12 selects the row.  
This row remains active (or open) for accesses until  
a PRECHARGE command is issued to that bank. A  
PRECHARGE command must be issued before opening  
a different row in the same bank.  
AUTO PRECHARGE  
AUTO PRECHARGE is a feature which performs the  
same individual-bank PRECHARGE function described  
above, without requiring an explicit command. This is  
accomplished by usingA10 to enableAUTO PRECHARGE  
in conjunction with a specific READ or WRITE command.  
A precharge of the bank/row that is addressed with the  
READ or WRITE command is automatically performed  
upon completion of the READ or WRITE burst, except in  
the full-page burst mode, whereAUTO PRECHARGE does  
not apply. AUTO PRECHARGE is nonpersistent in that it  
is either enabled or disabled for each individual READ or  
WRITE command.  
READ  
The READ command is used to initiate a burst read  
access to an active row. The value on the BA0, BA1 inputs  
selects the bank, and the address provided on inputsA0-8  
selects the starting column location. The value on input  
A10 determines whether or not AUTO PRECHARGE is  
used. If AUTO PRECHARGE is selected, the row being  
accessed will be precharged at the end of the READ  
burst; if AUTO PRECHARGE is not selected, the row will  
remain open for subsequent accesses. Read data appears  
on the I/Os subject to the logic level on the DQM inputs  
two clocks earlier. If a given DQM signal was registered  
HIGH, the corresponding I/Os will be High-Z two clocks  
later; if the DQM signal was registered LOW, the I/Os will  
provide valid data.  
AUTO PRECHARGE ensures that the precharge is initiated  
at the earliest valid stage within a burst. The user must  
not issue another command to the same bank until the  
precharge time (tRP) is completed. This is determined as  
if an explicit PRECHARGE command was issued at the  
earliest possible time.  
WRITE  
The WRITE command is used to initiate a burst write  
access to an active row. The value on the BA0, BA1 inputs  
selects the bank, and the address provided on inputsA0-8  
selects the starting column location. The value on inputA10  
determines whether or notAUTO PRECHARGE is used. If  
AUTO PRECHARGE is selected, the row being accessed  
will be precharged at the end of the WRITE burst; ifAUTO  
PRECHARGE is not selected, the row will remain open for  
subsequent accesses. Input data appearing on the I/Os  
is written to the memory array subject to the DQM input  
logic level appearing coincident with the data. If a given  
DQM signal is registered LOW, the corresponding data  
will be written to memory; if the DQM signal is registered  
HIGH, the corresponding data inputs will be ignored, and a  
WRITE will not be executed to that byte/column location.  
BURST TERMINATE  
The BURST TERMINATE command is used to truncate  
either fixed-length or full-page bursts. The most recently  
registered READ or WRITE command prior to the BURST  
TERMINATE command will be truncated.  
AUTO REFRESH  
AUTO REFRESH is used during normal operation of the  
SDRAM and is analagous to CAS-BEFORE-RAS (CBR)  
REFRESH in conventional DRAMs. This command is  
nonpersistent, so it must be issued each time a refresh  
is required.  
The addressing is generated by the internal refresh  
controller. This makes the address bits “Don’t Care” during  
an AUTO REFRESH command. Each 256Mb SDRAM  
requires 8,192 AUTO REFRESH cycles every refresh  
period (tREF). Providing a distributed AUTO REFRESH  
command will meet the refresh requirement and ensure  
PRECHARGE  
The PRECHARGE command is used to deactivate the  
open row in a particular bank or the open row in all banks.  
The bank(s) will be available for a subsequent row access  
January 2005  
Rev. 0  
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com