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WF4M32-100G2TI5 参数 Datasheet PDF下载

WF4M32-100G2TI5图片预览
型号: WF4M32-100G2TI5
PDF下载: 下载PDF文件 查看货源
内容描述: 4MX32 5V闪存模块 [4Mx32 5V FLASH MODULE]
分类和应用: 闪存内存集成电路
文件页数/大小: 15 页 / 310 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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White Electronic Designs
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Power Dissipation
Storage Temperature
Short Circuit Output Current
Endurance - Write/Erase Cycles
(Mil Temp)
Data Retention (Mil Temp)
Symbol
V
T
P
T
Tstg
I
OS
Ratings
-2.0 to +7.0
8
-65 to +125
100
100,000 min
20
Unit
V
W
°C
mA
cycles
years
WF4M32-XXX5
C
APACITANCE
(
P
F)
(TA = +25°C, V
IN
= OV,
F
= 1.0MH
Z
)
Parameter
OE capacitance
WE capacitance
CS capacitance
Data I/O capacitance
Address input capacitance
Symbol
HIP (H2) CQFP (G2T) CQFP( G4T)
C
OE
C
WE
C
CS
C
I/O
C
AD
75
75
20
30
75
75
75
50
30
75
20
20
20
30
20
This parameter is guaranteed by design but not tested.
R
ECOMMENDED
DC O
PERATING
C
ONDITIONS
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Operating Temperature (Mil.)
Operating Temperature (Ind.)
Symbol
V
CC
V
SS
V
IH
V
IL
T
A
T
A
Min
4.5
0
2.0
-0.5
-55
-40
Typ
5.0
0
-
-
-
-
Max
5.5
0
V
CC
+ 0.5
+0.8
+125
+85
Unit
V
V
V
V
°C
°C
DC C
HARACTERISTICS
- CMOS C
OMPATIBLE
(VCC = 5.0V, GND = 0V, TA = -55°C
TO
+125°C)
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program
or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LOx32
I
CC1
I
CC2
I
CC3
V
OL
V
OH
V
LKO
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz
CS = V
IL
, OE = V
IH
V
CC
= 5.5, CS = V
IH
, f = 5MHz, RESET = V
IH
I
OL
= 12.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
0.85 x
Vcc
3.2
4.2
Min
HIP
Max
10
10
320
420
20
0.45
0.85 x
Vcc
3.2
4.2
Min
G2T
Max
10
10
215
295
2.0
0.45
0.85 x
Vcc
3.2
4.2
G4T
Min
Max
10
10
345
445
95
0.45
Unit
µA
µA
mA
mA
mA
V
V
V
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The
frequency component typically is less than 2mA/MHz, with OE at V
IH
.
2. Icc active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
HIP = 66 pin, PGA Type, 1.385" square, Hermetic
Ceramic HIP (Package 402).
G2T = 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880")
square. Designed to fit JEDEC 68 lead 0.990" CQFJ
footprint (Fig. 3) (Package 509)
G4T = 68 lead, 40mm Low Profile CQFP, 3.5mm (0.140")
(Package 502 )
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com