ADVANCE INFORMATION
General Physical Specification
WCMC2016V1X
128K x 16 Pseudo Static RAM DIE
Substrate Connection Req.:
Ground
Wafer Diameter [mm]:
200.00
Die Size [µm]:
4010.74 x 1565.84
Step Size [µm]:
4095.44 x 1650.89
Scribe Size [µm]:
84.70 x 84.94
Pad Count:
64
Pad Size [µm]:
73.6 x 73.6
For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress
Semiconductor Website (http://www.cypress.com).
Mfg Part Number:
GC2016V5A
Die Part Number:
Die Technology:
PowerChip 0.165 µm
Metal I:
420 nm TiN/AlCu
Metal II:
880 nm TiN/Ti/AlCu/TiN
Metal III:
None
Die Passivation:
780nm P-Si3N4 + Polyimide
Product Thickness Guide
Code
XW
XW14
XW11
Description
Die (25-30 mil) in wafer form.
Die (14 mil) in wafer form.
Die (11 mil) in wafer form.
Min
617
320
252
Nom
685
355
280
Max
754
391
308
Unit
µm
µm
µm
Weida Semiconductor, Inc.
38-xyxyx
Revised August 22, 2001
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
