2N4401
NPN Silicon General Purpose Transistors
TO-92
FEATURES
Power dissipation
P
CM
:
0.625 W
（Tamb=25℃）
Collector current
I
CM:
0.6
A
Collector-base voltage
V
(BR)CBO
: 60
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
V
CE(sat)
V
BE(sat)
otherwise
Test
specified）
MIN
60
40
6
0.1
0.1
0.1
100
300
0.4
0.95
V
V
MAX
UNIT
V
V
V
μA
μA
μA
conditions
Ic=100μA , I
E
=0
I
C
= 1mA ,
I
E
=100μA,
I
B
=0
I
C
=0
V
CB
=50 V , I
E
=0
V
CE
=35 V , I
B
=0
V
EB
=5V ,
I
C
=0
V
CE
=1 V, I
C
= 150m A
I
C
=150 mA, I
B
=15m A
I
C
= 150 mA, I
B
=15m A
V
CE
= 10V, I
C
= 20mA
Transition frequency
f
T
250
MHz
f =
100MHz
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