2N5551
NPN Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation T
A
=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
2N5551
160
180
6.0
600
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0)
Collector Cutoff Current (VCB=120 Vdc, IE=0)
Emitter Cutoff Current (VEB= 4.0 Vdc, I C =0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
160
180
6.0
-
-
Max
-
-
-
0.05
0.05
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
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