2N7002K
N-Channel Enhancement
Mode Power MOSFET
P b
Lead(Pb)-Free
1
GATE
3
DRAIN
*
* Gate
Pretection
Diode
SOURCE
2
DRAIN CURRENT
640m AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
Description:
The 2N7002K utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extr
nt and cost-e ectiveness device.
The 2N7002K is universally used for all commercial-
industrial applications.
3
1
2
Features:
*Simple Drive Requirement
*Small Package Outline
SOT-23
Maximum Ratings
(T
A
=25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
,V
GS
@10V(T
A
,V
GS
@10V(T
A
Pulsed Drain Current
1, 2
Tota l Po wer Dis s ipation(T
A
=25˚C )
Maximum Junction-ambient
3
Unless Otherwise Specified)
Symbol
V
DS
V
G S
I
D
I
DM
P
D
R
θJA
T
J
T
stg
ESD
Value
60
±20
640
500
950
1.38
90
+150
-55~+150
2500
Unit
V
mA
W
˚C/W
˚C
˚C
V
Operating Junction Temperature Range
Storage Temperature Range
Gate−Source ESD Rating (HBM, Method 3015)
Device Marking
2N7002K = RK
WEITRON
http:www.weitron.com.tw
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Rev.A 07-Aug-08
WEITRON [ WEITRON TECHNOLOGY ]
