WEITRON
NPN Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
2SC1008
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (T
A
=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
I
CM
P
CM
T
J
Tstg
Value
80
0.7
0.8
-55 to +150
-55 to +150
Units
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
CLASSIFICATION OF h
FE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
= 100µA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 10µA, I
C
=0
V
CB
= 60V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 2V, I
C
= 50mA
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
V
CE
=10V,I
C
=50mA
MIN
80
60
8
TYP
MAX
Units
V
V
V
0.1
40
0.1
400
0.4
1.1
30
µA
µA
V
V
MHz
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400
WEITRON
hpp://www.weitron.com.tw
1/3
15-Feb-2011
WEITRON [ WEITRON TECHNOLOGY ]
