2SC3356
High-Frequency Amplifier Transistor
NPN Silicon
P b
Lead(Pb)-Free
FEATURES
* Low noise amplifier at VHF, UHF and CATV band.
* Low Noise and High Gain
* High Power Gain
1
2
3
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3
0.1
0.25
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
CE(sat)
I
CBO
I
EBO
h
FE
*
Test
conditions
MIN
20
12
TYP
MAX
UNIT
V
V
I
C
=10
μ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
C
= 50mA, I
B
=5mA
V
CB
=10V, I
E
=0
V
EB
=1V, I
C
=0
V
CE
=3V, I
C
=
10mA
V
CE
=10V, I
C
= 20mA
V
CE
=10V, I
C
= 7mA, f = 1GHz
200
1
1
82
7
2
270
mV
μ
A
μ
A
f
T
NF
GHz
dB
*
pulse test: pulse width≤350μs, Duty cycle≤2%
WEITRON
http://www.weitron.com.tw
1/3
Rev.B 25-Feb-09
WEITRON [ WEITRON TECHNOLOGY ]
