2SD313
NPN Silicon Epitaxial Power Transistor
P b
Lead(Pb)-Free
Features:
* DC Current Gain h
FE
= 40-320 @I
C
= 1.0A
* Low V
CE(sat)
≤ 1.0V(MAX) @I
C
= 2.0A, I
B
= 0.2A
* Complememtary to NPN 2SB507
COLLECTOR
2
BASE
1
1
2
3
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
TO-220
Unit
V
V
V
A
W
W/˚C
˚C
˚C
ABSOLUTE MAXIMUM RATINGS (T
A
=25ºC)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Total Device Disspation
T
A
=25°C
T
C
=25°C
Derate above 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
TJ
Tstg
Value
60
60
5.0
3.0
1.75
30
0.24
+150
-55 to +150
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I
C
=100µA, I
E
=0
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
I
E
=100µA, I
C
=0
Collector Cut-Off Current
V
CB
=60V, I
E
=0
Emitter-Cut-Off Current
V
EB
=60V,I
E
=0
Emitter-Cut-Off Current
V
EB
=4.0V, I
C
=0
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
Min
60
60
5.0
-
-
-
Max
-
-
-
-
-
-
Max
-
-
-
100
1.0
100
Unit
V
V
V
µA
mA
µA
WEITRON
http://www.weitron.com.tw
1/4
06-Feb-07
WEITRON [ WEITRON TECHNOLOGY ]
