BC546, A/B
BC547, A/B/C
BC548, A/B/C
NPN General Purpose Transistor
2
BASE
COLLECTOR
1
TO-92
1
3
EMITTER
2
3
Maximum Ratings
( TA =25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VECO
V CBO
VEBO
lC
BC546
65
80
6
BC547
45
50
6
100
BC548
30
30
6
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation
Alumina Substrate, TA = 25
℃
C
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
PD
Max
625
Unit
mW/
℃
C
Junction and Storage, Temperature
TJ, Tstg
-55 to +150
℃
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1 mAdc. lB =0)
Collector-Base Breakdown Voltage
(lC = 100
?
Adc. lE =0)
Emitter-Base Breakdown Voltage
(lE = 10
?
Adc. l C =0)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
V
(BR)CEO
65
45
30
80
50
30
Vdc
V
(BR)CBO
Vdc
V
(BR)EBO
6
Vdc
WEIT RON
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Rev.C 30-May-08