BC556 ... BC559
BC556 ... BC559
PNP
Version 2006-05-31
Power dissipation – Verlustleistung
CBE
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
500 mW
TO-92
(10D3)
0.18 g
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
18
9
16
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
BC556
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (T
j
= 25°C)
Group A
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 5 V, - I
C
= 10 µA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 100 mA
Small signal current gain
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
h
FE
h
FE
h
FE
typ. 90
110 ... 220
typ. 120
E-B short
B open
E open
C open
- V
CES
- V
CEO
- V
CBO
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
I
EM
T
j
T
S
80 V
65 V
80 V
Grenzwerte (T
A
= 25°C)
BC557
50 V
45 V
50 V
5V
500 mW
1
)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Kennwerte (T
j
= 25°C)
Group B
typ. 150
200 ... 450
typ. 200
Group C
typ. 270
420 ... 800
typ. 400
BC558/559
30 V
30 V
30 V
h-Parameters at/bei - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
h
fe
h
ie
h
oe
h
re
typ. 220
1.6 ... 4.5 kΩ
18 < 30 µS
typ. 1.5*10-4
typ. 330
3.2 ...8.5 kΩ
30 < 60 µS
typ. 2*10-4
typ. 600
6 ... 15 kΩ
60 < 110 µS
typ. 3*10-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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© Diotec Semiconductor AG
1
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