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BC857C 参数 Datasheet PDF下载

BC857C图片预览
型号: BC857C
PDF下载: 下载PDF文件 查看货源
内容描述: 双PNP通用晶体管 [PNP Dual General Purpose Transistors]
分类和应用: 晶体晶体管光电二极管IOT
文件页数/大小: 6 页 / 1006 K
品牌: WEITRON [ WEITRON TECHNOLOGY ]
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BC856BDW Series
Electrical Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
I
C
=10mA
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
V
(BR)CEO
-65
-45
-30
-80
-50
-30
-80
-50
-30
-5.0
-5.0
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-15
-4.0
V
(T
A
=25°C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Characteristics
Collector-Emitter Breakdown Voltage
V
EB
=0V, I
C
=-10µA
Emitter-Base Breakdown Voltage
I
C
=-10µA
V
(BR)CES
V
V
(BR)CBO
V
Emitter-Base Breakdown Voltage
I
E
=-1.0µA
Collector Cuto Current
V
CB
=-30V
V
CB
=-30V, T
A
=150°C
V
(BR)EBO
V
I
CBO
nA
µA
On Characteristics
DC Current Gain
V
CE
= –5.0V, I
C
= –10µA
V
CE
= –5.0V, I
C
= –2.0mA
BC856B, BC857B, BC858C
BC857C, BC858C
BC856B, BC857B, BC858C
BC857C, BC858C
h
FE
-
-
220
420
150
270
290
520
-
-
-0.7
-0.9
-
-
-
-
450
800
-0.3
-0.65
-
-
-750
-820
-
Collector-Emitter Saturation Voltage
I
C
= –10mA, I
B
= –0.5mA
I
C
= –100mA, I
B
= –5.0mA
Base-Emitter Saturation Voltage
I
C
= –10mA, I
B
= –0.5mA
I
C
= –100mA, I
B
= –5.0mA
Base-Emitter Voltage
V
CE
= –5.0V, I
C
= –2.0mA
V
CE
= –5.0V, I
C
= –10mA
V
CE(sat)
-
-
-
-
-600
-
V
V
BE(sat)
V
BE(on)
V
mV
Small-Signal Characteristics
Current-Gain-Bandwidth Product
V
CE
= –5.0V, I
C
= –10mA, f = 100MHz
Output Capacitance
V
CB
= –10V, f = 1.0kHz
Noise Figure
fT
Cob
NF
100
-
-
-
-
-
-
4.5
10
MHz
pF
dB
V
CE
= –5.0V, I
C
= –0.2mA, R
S
= 2.0k , f = 1.0kHz, B
W
= 200Hz
http://www.weitron.com.tw
WEITRON
2/6
14-Nov-07