BC856BDW Series
PNP Dual General Purpose Transistors
P b
Lead(Pb)-Free
3
2
1
6 5
4
1
4
5
6
2
3
PNP+PNP
SOT-363(SC-88)
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC856
65
80
5.0
100
BC857
45
50
5.0
100
BC858
30
30
5.0
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation Per Device
FR-5 Board(1)T
A
= 25°C
Derate Above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Note : FR-5=1.0 x 0.75 x 0.062 inch
Symbol
P
D
R
θJA
Tj
Tstg
Max
380
250
3.0
328
+150
-55 to +150
Unit
mW
mW/ °C
°C/W
°C
°C
Device Marking
BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L
WEITRON
http://www.weitron.com.tw
1/6
14-Nov-07
WEITRON [ WEITRON TECHNOLOGY ]
