BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
3
1
2
SOT-23
MARKING DIAGRAM
3
1
BASE
2
EMITTER
1
XX = Device
Code (See
2
Table Below)
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
BC856
BC857
BC858,BC859
Symbol
VCEO
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
V
Collector-Base Voltage
VCBO
VEBO
IC
Symbol
PD
R
θ
JA
PD
R
θ
JA
TJ,Tstg
V
V
mAdc
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Emitter-Base VOltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)
(Note 1.)T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
(I
C
= -10mA)
Collector-Emitter Breakdown Voltage
(I
C
=-10 µA ,VEB=0)
Collector-Base Breakdown Voltage
(I
C
=-10 µA)
Emitter-Base Breakdown Voltage
(I
E
=-1.0 µA)
(T
A
=25 C Unless Otherwise noted)
Symbol
Characteristics
Min
Typ
Max
Unit
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CEO
-65
-45
-30
-80
-50
-30
-80
-50
-30
-5.0
-5.0
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-15
-4.0
V
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
=-30V)
(VCB=-30V, TA=150 C)
I
CBO
nA
m
A
WEITRON
http://www.weitron.com.tw
1/4
Rev A 12-Apr-05
WEITRON [ WEITRON TECHNOLOGY ]
