BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
FEATURES
High current
Low voltage
Medium power general purposes
Driver stages of audio amplifiers.
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD
BCX55:BE BCX55-10:BG BCX52-16:BM
BCX56:BH BCX56-10:BK BCX56-16:BL
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
Collector-Base Voltage
Parameter
BCX54
BCX55
BCX56
V
CEO
Collector-Emitter Voltage
BCX54
BCX55
BCX56
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
45
60
100
45
60
80
5
1
500
150
-65-150
V
A
mW
℃
℃
V
V
Units
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
I
C
=1mA,I
B
=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE
f
T
I
E
=100μA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=5mA
V
CE
=2V,I
C
=150mA
V
CE
=2V,I
C
=500mA
I
C
=-500mA,I
B
=-50mA
V
CE
=2V,I
C
=500mA
V
CE
=5V,I
C
=10mA,f=100MHz
130
40
63
25
0.5
1
V
V
MHz
250
Test
conditions
BCX54
BCX55
BC56
BCX54
BCX55
BCX56
MIN
45
60
100
45
60
80
5
0.1
0.1
V
μA
μA
V
V
TYP
MAX
UNIT
I
C
=100μA,I
E
=0
W E IT R O N
h t t p : / / w w w . w e i t r o n . c o m . tw
1/2
25-Jun-08
WEITRON [ WEITRON TECHNOLOGY ]
