BCX56
NPN Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS (
T
A
=25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
V
CBO
V
CEO
V
EBO
IC
PD
TJ
Tstg
Value
100
80
5.0
1.0
500
+150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
Total Device Dissipation T
A
=25°C
Junction Temperature Range
Storage Temperature Range
Device Marking
BCX56=BH , BCX56-10=BK , BCX56-16=BL
OFF CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage, I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage, I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage, I
E
= 10µA, I
C
= 0
Collector Cut-off Current, V
CB
= 30V, I
E
= 0
Emitter Cut-off Current, V
EB
= 5.0V, I
C
= 0
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
Min
-
-
-
-
-
Max
100
80
5.0
0.1
0.1
Unit
V
V
V
µA
µA
W E IT R O N
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15-Feb-06
WEITRON [ WEITRON TECHNOLOGY ]
