DTA114EE Series
Bias Resistor Transistor PNP Silicon
P b
Lead(Pb)-Free
1
BASE
R1
R2
3
3
COLLECTOR
3
1
2
2
EMITTER
SC-89
(SOT-523F)
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
I
C
Value
50
50
100
Unit
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board
(1)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(1)
Total Device Dissipation FR-5 Board
FR-4 Board
(2)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(2)
Junction Temperature Range
Storage Temperature Range
1.FR-4 @ Minimum pad
2.FR-4 @1.0 x 1.0 Inch pad
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
Max
200
1.6
600
300
2.4
400
-55 to +150
-55 to +150
Unit
mW
mW/ ˚C
˚C/W
mW
mW/ ˚C
˚C/W
˚C
˚C
Device Marking and ResistorValues
Device
DTA114EE
DTA124EE
DTA144EE
DTA114YE
DTA114TE
DTA143TE
Marking
6A
6B
6C
6D
6E
6F
R1(K)
10
22
47
10
10
4.7
R2(K)
10
22
47
47
8 8
Device
DTA123EE
DTA143EE
DTA143ZE
DTA124XE
DTA123JE
DTA115EE
DTA144WE
Marking
6H
43
6K
6L
6M
6N
6P
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
W E IT R O N
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12-Jun-06
WEITRON [ WEITRON TECHNOLOGY ]
