DTC114EM Series
Bias Resistor Transistor NPN Silicon
P b
Lead(Pb)-Free
1
BASE
R1
R2
COLLECTOR
3
3
1
2
2
EMITTER
SOT-723
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current-Continuous
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board
(1)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(1)
Total Device Dissipation FR-5 Board
FR-4 Board
(2)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(2)
Junction Temperature Range
Storage Temperature Range
1. FR-4 @ Minimum pad
2. FR-4 @1.0 x 1.0 Inch pad
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
Max
260
2.0
480
600
4.8
205
+150
-55 to +150
Unit
mW
mW/°C
˚C/W
mW
mW/°C
°C/W
°C
°C
Device Marking and Resistor Values
Device
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
Marking
8A
8B
8C
8D
94
8F
8H
R1(K)
10
22
47
10
10
4.7
2.2
R2(K)
10
22
47
47
∞
∞
2.2
Device
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
Marking
8J
8K
8L
8M
8N
8P
8T
R1(K)
4.7
4.7
22
2.2
100
47
47
R2(K)
4.7
47
47
47
100
22
∞
W E IT R O N
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11-Apr-07
WEITRON [ WEITRON TECHNOLOGY ]
