KTC3875
Plastic-Encapsulate Transistors
NPN Silicon
BASE
COLLECTOR
3
1
2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
50
60
5.0
150
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R
θJA
T
J, Tstg
Value
150
1.2
833
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
KTC3875=AL
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 60Vdc , IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc , I C=0)
1. FR-5=1.0
I
I
0.75
I
I
0.062 in
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
50
60
5.0
-
-
Max
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
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WEITRON [ WEITRON TECHNOLOGY ]
